FDG6306P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDG6306P
Datasheet:
Description:
MOSFETs SC-70-6 SMD/SMT P-Channel number of channels:2 300 mW -20 V Continuous Drain Current (ID):600 mA 2 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 2 mm |
| Width | 1.25 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Height | 1 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.028 g |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Current Rating | -600 mA |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 300 mW |
| Power Dissipation | 300 mW |
| Threshold Voltage | -1.2 V |
| Number of Channels | 2 |
| Input capacitance | 114 pF |
| Continuous Drain Current (ID) | 600 mA |
| Rds On Max | 420 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 5.5 ns |
| Turn-Off Delay Time | 6 ns |
| Element Configuration | Dual |
| Rise Time | 14 ns |
| Gate Charge | 2 nC |
| Drain to Source Resistance | 300 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | P-Channel |
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